发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To prevent residual of hydrogen intruding into a silicon-containing film by performing selective oxidation of the silicon-containing film while preventing oxidation of a metal-containing film. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: performing plasma discharge and maintaining for a predetermined time with a hydrogen-containing gas and an oxygen-containing gas supplied to a processing chamber while heating a substrate at a first temperature; and supplying a rare gas to the processing chamber and maintaining the inside of the processing chamber under a rare gas atmosphere for a predetermined time while heating the substrate at a second temperature higher than the first temperature. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012054475(A) |
申请公布日期 |
2012.03.15 |
申请号 |
JP20100197081 |
申请日期 |
2010.09.02 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
OGAWA UNRYU |
分类号 |
H01L21/316;H01L21/31;H05H1/46 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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