发明名称 METHOD OF PRODUCING TRANSPARENT CONDUCTIVE THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of producing transparent conductive films, by which a variation in the resistance values of obtained crystalline transparent conductive films is reduced and the thin films are stably produced. <P>SOLUTION: The method of producing a transparent conductive thin film includes depositing the transparent conductive thin film on a transparent film substrate by a vapor phase method by using a target containing, as a main component, indium oxide-tin oxide. In the method of producing the transparent conductive thin film, film deposition is performed in an argon gas atmosphere containing argon gas, nitrogen gas and steam gas, wherein the content of the nitrogen gas to the argon gas is within the range of 2,500-8,500 ppm, and the content of the steam gas to the argon gas is within the range of 1,450-13,500 ppm. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012052201(A) 申请公布日期 2012.03.15
申请号 JP20100196878 申请日期 2010.09.02
申请人 NITTO DENKO CORP 发明人 HAISHI MOTOKI;NASHIKI TOMOTAKE
分类号 C23C14/08;C01G19/00;C23C14/34;H01B13/00 主分类号 C23C14/08
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