| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact not containing expensive gallium (Ga) and having a small bulk resistance, and to provide an oxide semiconductor thin film having the same composition as that of the oxide sintered compact. <P>SOLUTION: The oxide sintered compact consists of indium (In), zinc (Zn), a metal element X (where, X represents one kind or more of metal selected from Al and Ti), and oxygen (O) where the atomic ratios of indium (In), zinc (Zn), and metal element X satisfy following relations; 0.2≤In/(In+Zn+X)≤0.8, 0.1≤Zn/(In+Zn+X)≤0.5, and 0.1≤X/(In+Zn+X)≤0.5. An oxide semiconductor thin film having the same composition as the atomic ratios and deposited by sputtering using the oxide sintered compact as a target is also provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
