发明名称 |
MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
Etching of a semiconductor layer including a part over a gate wiring and formation of a contact hole for connection between a pixel electrode and a drain electrode are performed by one-time photolithography step and one-time etching step; thus, the number of photolithography steps is reduced. The exposed part of the gate wiring is covered by an insulating layer, and this insulating layer also functions as a spacer for maintaining a space for a liquid crystal layer. By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at lower cost and higher productivity. Using an oxide semiconductor for the semiconductor layer can realize a liquid crystal display device with low power consumption and high reliability.
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申请公布号 |
US2012064650(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113226822 |
申请日期 |
2011.09.07 |
申请人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;MIYAKE HIROYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;MIYAKE HIROYUKI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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