| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for miniaturizing a bidirectional switch with high withstand voltage. <P>SOLUTION: In a bidirectional switch using MOSFET, the source terminal and back gate terminals of MOSFET are connected to each other through a transfer gate TG. A switch may be used between a junction point between a back gate terminal and the transfer gate TG of MOSFET, and a ground potential (in the case that the MOSFET is n-channel) or a power supply potential (in the case that the MOSFET is p-channel). <P>COPYRIGHT: (C)2012,JPO&INPIT |
