| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new type MOSFET having a lower on resistance. <P>SOLUTION: A transistor comprises an arrangement of annular trench, a source metal film 224 and a gate metal film 524. In the arrangement of annular trench, each trench is separated from an adjoining trench by an annular mesa. The gate metal film 524 has a plurality of gate metal legs 524A, 524B, 524C, 524D extending radially outward from a central region toward the periphery of a die. The source metal film 224 has a plurality of parts located between the gate metal legs 524A, 524B, 524C, 524D. <P>COPYRIGHT: (C)2012,JPO&INPIT |
