| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a simple structure not requiring various processes for a back face. <P>SOLUTION: The semiconductor device comprises a structure in which a trench separation portion 11 is disposed between an element region 8 and a wiring lead-out portion 9 by use of an SOI substrate 5 on which an n<SP POS="POST">+</SP>-type embedded region 6 of an active layer 2 is formed at a boundary portion with an embedded insulator 4, and the trench separation portion 11 is formed with a depth same as or deeper than that of an n<SP POS="POST">-</SP>-type drift layer 7 and at a distance from the embedded insulator 4. In such structure, the element region 8 and the wiring lead-out portion 9 can be electrically connected via the n<SP POS="POST">+</SP>-type embedded region 6 that can be previously formed on the SOI substrate 5. Accordingly, the semiconductor device with a simple structure is realized which can electrically connect the element region 8 and the wiring lead-out portion 9 of a high breakdown voltage MOSFET 1 without preparing a back electrode, and which does not require various processes for a back face. This can inhibit a large potential to be applied to an interlayer insulator 18. Further, the semiconductor device can prevent non-uniform potential distribution and inhibit decrease in breakdown voltage of the high breakdown voltage MOSFET 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
