| 摘要 |
The present invention relates in particular to a process for treating a substrate by means of a luminous flux (IR) of determined wavelength, this substrate comprising an embedded layer (3) which is absorbent, that is, which absorbs said luminous flux independently of the temperature, this embedded layer being interleaved between a first layer (2), said treatment layer, and a second layer (4), the first semi-conductive layer (2) having a coefficient of absorption of luminous flux which is low at ambient temperature and growing as this temperature rises, according to which said first layer (2) is irradiated by at least one pulse of said luminous flux (IR). It is especially remarkable in that - said luminous flux (IR) is applied in several places of the surface of the first layer (2) to heat regions of the embedded layer (3) and to generate in this first layer (2) by propagation of a thermal front opposite the heated regions of the embedded layer (3) heated zones forming thermal pillars (P), which dilate and generate constraints within the second layer (4), via the embedded layer (3). |
