发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A semiconductor storage device includes first to fourth switch circuit. The semiconductor storage device includes a row decoder which controls a voltage of a word line. The semiconductor storage device includes a first selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a first resistance change element which is connected in series to the first selection transistor between the first bit line and the second bit line, and of which a resistance value changes according to a flowing current. The semiconductor storage device includes a second selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a second resistance change element which is connected in series to the second selection transistor between the second bit line and the third bit line, and of which a resistance value changes according to a flowing current. |
申请公布号 |
US2012063215(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113191678 |
申请日期 |
2011.07.27 |
申请人 |
TAKAHASHI MASAHIRO;FUJITA KATSUYUKI;UEDA YOSHIHIRO;HOYA KATSUHIKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKAHASHI MASAHIRO;FUJITA KATSUYUKI;UEDA YOSHIHIRO;HOYA KATSUHIKO |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|