发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 A semiconductor storage device includes first to fourth switch circuit. The semiconductor storage device includes a row decoder which controls a voltage of a word line. The semiconductor storage device includes a first selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a first resistance change element which is connected in series to the first selection transistor between the first bit line and the second bit line, and of which a resistance value changes according to a flowing current. The semiconductor storage device includes a second selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a second resistance change element which is connected in series to the second selection transistor between the second bit line and the third bit line, and of which a resistance value changes according to a flowing current.
申请公布号 US2012063215(A1) 申请公布日期 2012.03.15
申请号 US201113191678 申请日期 2011.07.27
申请人 TAKAHASHI MASAHIRO;FUJITA KATSUYUKI;UEDA YOSHIHIRO;HOYA KATSUHIKO;KABUSHIKI KAISHA TOSHIBA 发明人 TAKAHASHI MASAHIRO;FUJITA KATSUYUKI;UEDA YOSHIHIRO;HOYA KATSUHIKO
分类号 G11C11/00 主分类号 G11C11/00
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