发明名称 SEMICONDUCTOR DEVICE PRODUCTION METHOD AND RINSE
摘要 <p>The present invention provides a semiconductor device production method, and a rinse used in the production method, the method comprising the sequential steps of: a sealing composition adding step of adding a semiconductor sealing composition and forming a semiconductor sealing layer on at least one part of a surface of a semiconductor, the composition containing a weight-average molecular weight of 2000 to 600000 of resin having a cationic functional group, and an amount of sodium and potassium being 10 ppb by mass or less at the respective element standard; and a washing step of washing the surface, on which the semiconductor sealing layer of the semiconductor substrate is formed, in a rinse with a pH of 6 or less at 25 °C.</p>
申请公布号 WO2012033172(A1) 申请公布日期 2012.03.15
申请号 WO2011JP70516 申请日期 2011.09.08
申请人 MITSUI CHEMICALS, INC.;ONO, SHOKO;KOHMURA, KAZUO;TANAKA, HIROFUMI 发明人 ONO, SHOKO;KOHMURA, KAZUO;TANAKA, HIROFUMI
分类号 H01L21/312;C09K3/10;H01L21/304;H01L21/308;H01L21/768;H01L23/522 主分类号 H01L21/312
代理机构 代理人
主权项
地址