发明名称 |
SEMICONDUCTOR DEVICE PRODUCTION METHOD AND RINSE |
摘要 |
<p>The present invention provides a semiconductor device production method, and a rinse used in the production method, the method comprising the sequential steps of: a sealing composition adding step of adding a semiconductor sealing composition and forming a semiconductor sealing layer on at least one part of a surface of a semiconductor, the composition containing a weight-average molecular weight of 2000 to 600000 of resin having a cationic functional group, and an amount of sodium and potassium being 10 ppb by mass or less at the respective element standard; and a washing step of washing the surface, on which the semiconductor sealing layer of the semiconductor substrate is formed, in a rinse with a pH of 6 or less at 25 °C.</p> |
申请公布号 |
WO2012033172(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
WO2011JP70516 |
申请日期 |
2011.09.08 |
申请人 |
MITSUI CHEMICALS, INC.;ONO, SHOKO;KOHMURA, KAZUO;TANAKA, HIROFUMI |
发明人 |
ONO, SHOKO;KOHMURA, KAZUO;TANAKA, HIROFUMI |
分类号 |
H01L21/312;C09K3/10;H01L21/304;H01L21/308;H01L21/768;H01L23/522 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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