METHOD FOR PRODUCING HIGH-PURITY TRICHLOROSILANE

摘要

The invention relates to techniques for producing high-purity trichlorosilane used as a source of silicon in microelectronics and nanoelectronics production. The technical results achieved in the claimed invention are making the process simpler for greater safety, extending the service life of the equipment, preventing trichlorosilane pollution with equipment material, and reducing power inputs. These technical results are achieved in a method for producing high-purity trichlorosilane comprising reacting silicon tetrachloride with commercial silicon and hydrogen chloride, separating the mixture of chlorosilanes, and recycling unreacted silicon tetrachloride, in which trichlorosilane is synthesized in two stages, the first stage comprising comminuting commercial silicon actively in a closed reactor to a highly homogenous nano-size state of particles measuring 1,000 to 50 nm in the environment of high-purity silicon tetrachloride at temperatures of 260 K to 300 K until gaseous silicon dichloride is obtained, and reacting silicon dichloride in a second-stage reactor with hydrogen chloride at temperatures of 160 K to 300 K until high-purity trichlorosilane is produced.