ALUMINIUM PAD POWER BUS FOR INTEGRATED CIRCUIT DEVICE USING COPPER TECHNOLOGY INTERCONNECTION STRUCTURE, AND SIGNAL ROUTING TECHNOLOGY

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by less steps for power bus interconnection structure.

SOLUTION: A first passivation stack 149 is formed on conductive runners 132 and 134 and a dielectric layer 162. An opening is formed by penetrating and defining the first passivation stack using normal lithography technology and dielectric etching technology. A conductive barrier layer 166 is formed on an exposed surface. The opening is filled by blanket-depositing an aluminum layer. An aluminum pad 170 is formed in the opening by patterning/etching steps. A conductive via 172 that contacts conductively with the runner 134 is formed in the opening. A power bus 174 is also formed in the aluminum layer, in the patterning/etching steps identical with that used for forming the aluminum pad.

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