发明名称 |
CHALCOPYRITE-TYPE SEMICONDUCTOR PHOTOVOLTAIC DEVICE |
摘要 |
A method comprising providing a layer structure for a photovoltaic device, the layer structure comprising an electrode, a light absorber comprising a layer of chalcopyrite-type semiconductor material, such as copper indium gallium diselenide, disposed on the electrode and a transparent electrode disposed on the light absorber. The method also comprises delivering a spatially-shaped picosecond pulsed laser beam so as to remove material from a region of the transparent electrode so as to expose at least a portion of the light absorber. |
申请公布号 |
WO2012032064(A2) |
申请公布日期 |
2012.03.15 |
申请号 |
WO2011EP65416 |
申请日期 |
2011.09.06 |
申请人 |
FIANIUM LIMITED;BAIRD, BRIAN W;GERKE, TIMOTHY D |
发明人 |
BAIRD, BRIAN W;GERKE, TIMOTHY D |
分类号 |
H01L27/142 |
主分类号 |
H01L27/142 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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