| 摘要 |
<p>A light-emitting diode chip is specified, comprising an n-conducting region (1), a p-conducting region (2), an active region (3) between the n-conducting region (1) and the p-conducting region (2), a mirror layer (4) at that side of the p-conducting region (2) which is remote from the active region ( 3 ), and an insulation layer (5) formed with an electrically insulating material, wherein the mirror layer (4) is designed for reflecting electromagnetic radiation generated in the active region ( 3 ), and the mirror layer (4) has a perforation (41), wherein a side area (4a) of the mirror layer (4) is completely covered by the insulation layer (5) in the region of the perforation (41).</p> |
