| 摘要 |
PURPOSE: An antireflective layer for a backlight image sensor and a manufacturing method thereof are provided to multiply permeability of red, green, blue optical wavelengths. CONSTITUTION: A substrate(210) comprises a front side(212) and a back side(214). A pixel array(220) is formed on the front of the substrate. The pixel array detects the brightness of incident light(225) which is irradiated toward the back side of the substrate. The pixel array comprises pixels corresponding to specific optical wavelengths. An MLI(Multilayer Interconnect) structure(230) is formed on the front of the substrate. The MLI structure comprises insulating layers(232, 233, 234) in which conductive layers(235, 236) are formed.
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