METHOD OF VERTICALLY GROWING GALIUM NITRIDE

摘要

PURPOSE: A vertical grow method of gallium nitride nanowire is provided to grow gallium nitride nanowire vertically on a substrate by using two or more catalytic substances. CONSTITUTION: A vertical grow method of gallium nitride nanowire comprises the following steps: successively evaporating a first catalyst layer(120) and a second catalyst layer(130) on a substrate(110); heating the substrate at a first temperature; supplying a gallium precursor and a nitrogen precursor to the substrate; and vertically growing the gallium nitride nanowire on top of the substrate. The first and the second catalyst layers are respectively formed in 0.1-10nm thickness. The first catalyst layer is composed of noble metal and the second catalyst layer is composed of transition metal. The first catalyst layer is formed with one of the following metals: Au, Pt, and Pd. The second catalyst layer is formed with one of the following metals: Ni, Al, and Fe. The second catalyst layer has higher melting temperature than the first catalyst layer.