| 摘要 |
PURPOSE: A silicon wafer and a manufacturing method thereof are provided to perform a first heat treatment process of a single silicon wafer among two silicon wafers and perform a second heat treatment process of another silicon wafer, thereby manufacturing the silicon wafer. CONSTITUTION: An unstructured silicon wafer is prepared. The unstructured silicon wafer is heated at preheating temperatures in a range of 600 to 1000°C. A lateral part of the silicon wafer receives light emitted from a flashlight fro 15 to 400ms. The thickness of the silicon wafer is 0.6 to 1.0mm. |
