发明名称 |
STACKING METHOD OF WAFER USING FILLING-METAL PROJECTED OUT OF THE THROUGH VIA HOLE |
摘要 |
PURPOSE: A stacking method of wafer using filling-metal projected through a via hole is provided to improve productivity by forming a wafer protrusion through only filing a filling material into a penetration via hole and simplifying wafer lamination process. CONSTITUTION: A wafer having a through via hole is mounted in a via hole filling apparatus(S10). A filling metal fused inside the through via hole is filled(S20). Chemical mechanical polishing on one side of a wafer is performed(S30). Silicon etching on one side of the wafer is performed(S40). A protrusion is formed in the area corresponding to the through via hole(S50). The protrusion is touched with the filling metal which is filled in the through via hole of the wafer(S60). Under fill is coated between the wafers(S70).
|
申请公布号 |
KR101122039(B1) |
申请公布日期 |
2012.03.12 |
申请号 |
KR20100087845 |
申请日期 |
2010.09.08 |
申请人 |
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY |
发明人 |
YOO, SE HOON;LEE, CHANG WOO;KIM, JUN KI;KO, YOUNG KI |
分类号 |
H01L23/48;H01L23/045;H01L23/055 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|