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发明名称
SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD AND SILICON CARBIDE SUBSTRATE
摘要
申请公布号
KR20120022952(A)
申请公布日期
2012.03.12
申请号
KR20117027188
申请日期
2010.09.29
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人
NISHIGUCHI TARO;MASUDA TAKEYOSHI;SASAKI MAKOTO;HARADA SHIN;NAMIKAWA YASUO;FUJIWARA SHINSUKE
分类号
H01L21/20
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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