| 摘要 |
According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1ppmwt to 3ppmwt inclusive, and Zn concentration set to 1mol% to 5mol% inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.
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