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发明名称
COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN
摘要
<p>상기 화학식 1a, 1b 중, R은 수소 등을, R는 단결합 등을, R은 불소 치환된 탄소수 1 내지 12의 직쇄상 또는 분지상의 알킬기 등을 나타낸다.</p>
申请公布号
KR101121380(B1)
申请公布日期
2012.03.09
申请号
KR20097008996
申请日期
2007.10.11
申请人
发明人
分类号
G03F7/004;G03F7/11
主分类号
G03F7/004
代理机构
代理人
主权项
地址
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