| 摘要 |
<P>PROBLEM TO BE SOLVED: To quickly and surely detect a word line leakage occurrence location without needing a special pad or switch for detecting a word line leakage. <P>SOLUTION: When a word line leakage test for determining a leakage state of a word line is performed, a control circuit 4 performs the following: applying a voltage corresponding to test pattern data from a voltage control circuit 20 to the word line connected to a memory cell array 100 in which the test pattern data is written; bringing a transfer transistor 12 to a non-conductive state to set the word line to a floating state; operating a sense amplifier circuit 30 after a predetermined period of time has elapsed since the transfer transistor 12 was switched to the non-conductive state, to execute read operation for the memory cell array 100; and comparing the result of the read operation with an expected value corresponding to the test pattern data. <P>COPYRIGHT: (C)2012,JPO&INPIT |
