发明名称 |
SEMICONDUCTOR DEVICE, ELECTRIC CIRCUIT USING THE SAME AND METHOD OF CONTROLLING ELECTRIC CIRCUIT |
摘要 |
The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device 10, an electron supply layer 12 is formed on a channel layer 11. A two-dimensional electron gas (2DEG) layer 13 is formed at the side of the channel layer of the hetero-junction interface. Electrons flow through the 2DEG layer 13 between a source electrode 14 formed on the surface of the electron supply layer 12 and a drain electrode 15 that is formed on the same surface. A potential detection electrode 17 is arranged on the electron supply layer 12 between the gate electrode 16 and the source electrode 14. A resistor 18 having a sufficiently high resistance value makes the electric current flowing to the potential detection electrode 17 negligible relative to the drain current in operation.
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申请公布号 |
US2012056648(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113223986 |
申请日期 |
2011.09.01 |
申请人 |
IWABUCHI AKIO;AOKI HIRONORI |
发明人 |
IWABUCHI AKIO;AOKI HIRONORI |
分类号 |
H03K17/06;H01L23/544 |
主分类号 |
H03K17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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