| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the throughput of substrate joint processing with properly joining substrates. <P>SOLUTION: In a joint system, the surface of a wafer is activated by using plasma of processing gas in a surface activating device (steps S2, S9) under the state that the wafer is electrostatically attracted to a lower electrode (steps S1, S8), the electrostatic attraction of the wafer to the lower electrode is stopped (steps S3, S10), and then the wafer is electrically neutralized by using plasma of neutralizing gas (steps S4, S11). Thereafter, in a surface hydrophilic device, the surface of the wafer is made hydrophilic (steps S5, S12). In a joint device, wafers whose surfaces are activated and made hydrophilic are joined to each other by Van der Waals' forces and hydrogen bond (steps S6, S7, S13 to S17). <P>COPYRIGHT: (C)2012,JPO&INPIT |
