INDIUM TARGET AND METHOD FOR MANUFACTURING SAME

摘要

The present invention provides an indium target enabling a high sputtering rate to be achieved while abnormal electric discharge is suppressed, and a method for manufacturing the indium target. During a solidification process when an indium ingot is manufactured by melting and casting, ultrasonic vibration is applied to molten indium at least before the molten indium solidifies so as to suppress coarsening of the indium crystal grain size. As a result, the overall average grain size of the indium target is no greater than 10 mm, and when crystal grains of the indium target are observed from a cross section of the indium target taken in the direction parallel to the thickness direction of the indium target, the ratio of the average grain size of the indium target in the direction parallel to the thickness direction with respect to the average grain size of the indium target in the direction perpendicular to the thickness direction is 0.7 to 1.1. The indium target has pores having a diameter of 50 µm or greater at a density of 1 pore/cm3 or less.