NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a normally-off type nitride semiconductor device that is operable at high frequency and can be fabricated only with a well-manageable manufacturing method.

SOLUTION: A floating electrode 8 that makes Schottky-contact with an electron supply layer 4 is disposed on the electron supply layer 4 between a source electrode 5 and a drain electrode 6. A gate electrode 7 is disposed on the floating electrode 8 via an insulating film 9. A positive bias voltage is applied to the gate electrode so that electrons are accumulated in the floating electrode.

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