| 摘要 |
A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.
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