发明名称 |
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A structure with which the zero current of a field effect transistor using a conductor-semiconductor junction can be reduced is provided. A floating electrode (102) including a conductor or a semiconductor and being enclosed by an insulator (104) is formed between a semiconductor layer (101) and a gate (105) so as to cross the semiconductor layer (101) and the floating electrode (102) is charged, whereby carriers are prevented from flowing from a source electrode (103a) or a drain electrode (103b). Accordingly, a sufficiently low carrier concentration can be kept in the semiconductor layer (101) and thus the zero current can be reduced. |
申请公布号 |
WO2012029674(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
WO2011JP69362 |
申请日期 |
2011.08.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;TAKEMURA, YASUHIKO |
发明人 |
TAKEMURA, YASUHIKO |
分类号 |
H01L29/786;H01L21/336;H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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