SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes an NMIS transistor including a first gate insulating film containing a high-k dielectric and a first gate electrode provided on the first gate insulating film and containing a metal material and a PMIS transistor including a second gate insulating film containing a high-k dielectric and a second gate electrode provided on the second gate insulating film and containing a metal material. A side surface of the first gate insulating film is located at an inner side of a side surface of the first gate electrode. A ratio of a length of the first gate insulating film along a gate length direction to a length of the first gate electrode along the gate length direction is lower than a ratio of a length of the second gate insulating film along the gate length direction to a length of the second gate electrode along the gate length direction.