发明名称 SEMICONDUCTOR COMPOUND STRUCTURE AND METHOD OF FABRICATING THE SAME USING GRAPHENE OR CARBON NANOTUBES, AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR COMPOUND STRUCTURE
摘要 A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.
申请公布号 US2012056237(A1) 申请公布日期 2012.03.08
申请号 US201113095122 申请日期 2011.04.27
申请人 CHOI JUN-HEE;KIM UN-JEONG;LEE SANG-JIN;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JUN-HEE;KIM UN-JEONG;LEE SANG-JIN
分类号 H01L33/30;H01L21/20;H01L29/20 主分类号 H01L33/30
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