发明名称 |
SEMICONDUCTOR COMPOUND STRUCTURE AND METHOD OF FABRICATING THE SAME USING GRAPHENE OR CARBON NANOTUBES, AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR COMPOUND STRUCTURE |
摘要 |
A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.
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申请公布号 |
US2012056237(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113095122 |
申请日期 |
2011.04.27 |
申请人 |
CHOI JUN-HEE;KIM UN-JEONG;LEE SANG-JIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JUN-HEE;KIM UN-JEONG;LEE SANG-JIN |
分类号 |
H01L33/30;H01L21/20;H01L29/20 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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