| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture with high productivity a semiconductor device with excellent electric characteristics. <P>SOLUTION: After a seed crystal including high-crystallinity mixed phase grains at low grain density is formed under a first condition, the mixed phase grains of the seed crystal are grown under a second condition on the seed crystal, thereby stacking a microcrystalline semiconductor film on the seed crystal so as to fill the space between the mixed phase grains. In the first condition, a deposition gas including silicon or germanium is diluted with hydrogen of the flow rate set to 50 times or more and 1000 times or less with respect to the flow rate of the deposition gas, and the pressure in a process chamber is set to more than 1333 Pa and less than or equal to 13332 Pa. In the second condition, the deposition gas including silicon or germanium is diluted with hydrogen of the flow rate set to 100 times or more and 2000 times or less with respect to the flow rate of the deposition gas, and the pressure in the process chamber is set to more than or equal to 1333 Pa and less than or equal to 13332 Pa. <P>COPYRIGHT: (C)2012,JPO&INPIT |
