SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having such a structure with which self turn-on due to noise does not take place easily and in which recovery loss can be reduced.

SOLUTION: A gate electrode 8 has a double gate structure with first and second gate electrodes 8a, 8b of different depth. With such a structure, an inversion layer is formed for a p-type base region 3 by turning only the first gate electrode 8a out of the first and second gate electrodes 8a, 8b, but the inversion layer may be formed not deep enough to connect an n-type drift layer 2 and an n+-type impurity region 4. The first gate electrode 8a functions as an excessive carrier injection inhibition gate.

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