| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide means for determining quantitative analysis limit for a method of analyzing the concentration of iron in boron-doped p-type silicon with high reliability. <P>SOLUTION: There is determined a quantitative analysis limit for a method of quantitatively analyzing the concentration of iron in a boron-doped p-type silicon on the basis of variation of minority carrier diffusion length before and after light irradiation which is determined by a surface optical voltage measuring device. The concentration of iron in a blank wafer which does not substantially contain Fe-B pairs is determined by the analysis method, and a quantitative analysis limit value is determined from the determined iron concentration. This step is carried out for two or more blank wafers different in standard for the minority carrier diffusion length. A correlation formula for the quantitative analysis limit value and the minority carrier diffusion length is determined or the correlation therebetween is graphed on the basis of the quantitative analysis limit values determined for the two or more blank wafers and the standards of the minority carrier diffusion length, and the quantitative analysis limit dependent on the minority carrier diffusion length is determined by using the correlation formula or the graph. <P>COPYRIGHT: (C)2012,JPO&INPIT |
