| 摘要 |
PURPOSE: An electro-static discharge protection element is provided to produce a high operating resistance and snapback prevention voltage by arranging first and second P-N diodes between a MOS(Metal Oxide Semiconductor) transistor and a cathode. CONSTITUTION: A deep n-well region(102) is arranged in an upper certain region of a p-substrate(100). A p-well region(104) and an n-well region(106) are respectively arranged in an upper certain area of the deep n-well region. A part of a left side of an n-drain region(108) is placed at an upper part of the p-well region. An n-area source(110) is arranged at the upper part of the p-well region. A first impurity region(120) and a second impurity region(122) are arranged between the n-drain region and a p-anode electrode region(116).
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