INDIUM TARGET AND PRODUCTION METHOD FOR SAME

摘要

Provided is an indium target capable of maintaining high sputter rates while curbing abnormal electrical discharge, and the production method thereof. Provided according to the present invention is an indium target of which: the average crystalline particle diameter of the target surface is 10 mm or less; the ratio of the average particle diameter perpendicular to the rolling direction compared with the average particle diameter parallel to the rolling direction is 0.1 to less than 0.7, pertaining to crystalline particles observed from a cross section parallel to the rolling direction; and voids with pore diameters 50 µm or larger are counted at 1 void/cm3 or less. This indium target can be produced by cold rolling the indium raw material subsequent to melting and casting.