发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PURPOSE: A semiconductor integrated circuit is provided to reduce a high frequency power source sharing phenomenon by a short-circuited coupling part in high frequency band. CONSTITUTION: A first power source line receives first ground voltage. A second power source line(VL2) receives second ground voltage(VSSQ). A third power source line receives first power source voltage. A coupling stage(7) comprises an MOS(Metal Oxide Semiconductor) transistor in which a gate is connected to the third power source line, a drain is connected to the second power source line, and a source is connected to the first power source line. A pre-driver(3) drives a pull-down signal and a pull-up signal by receiving data synchronized to a clock signal. The pre-driver is operated by receiving second power source voltage and the second ground voltage.
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申请公布号 |
KR20120020242(A) |
申请公布日期 |
2012.03.08 |
申请号 |
KR20100083614 |
申请日期 |
2010.08.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HYUN SEOK;LEE, JUN HO;JUNG, BOO HO;CHO, SUN KI;KIM, YANG HEE;KIM, YOUNG WON |
分类号 |
G11C5/14;G11C11/21 |
主分类号 |
G11C5/14 |
代理机构 |
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地址 |
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