| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the breakdown voltage of a Schottky barrier diode (SBD) element in a semiconductor device having a power transistor and the SBD element. <P>SOLUTION: A semiconductor device includes a first and second regions in a primary surface of a semiconductor substrate. In the first and second regions, a plurality of first and second conductors are formed, respectively. Between adjacent first conductors in the first region, a first semiconductor region and a second semiconductor region are formed, the second semiconductor region being located in the first semiconductor region and having the opposite conductive type to the first semiconductor region. Between adjacent second conductors in the second region, a third semiconductor region is formed which has the same conductive type as the second semiconductor region and has a lower concentration than that of the second semiconductor region. Under the third semiconductor region, a fourth semiconductor region is formed which has the same conductive type as the third semiconductor region and has a higher concentration than that of the third semiconductor region. On the second region of the semiconductor substrate, a metal is formed. The metal is electrically connected to the second semiconductor region. The third semiconductor region contacts the metal to form a Schottky junction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
