NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile memory device is provided to improve sensing margin by controlling a level of a sensing voltage through the feedback of an output signal of a current-voltage converter in a read operation. CONSTITUTION: A cell array(100) includes one or more unit cells. Data is read and written in the cell array. A current-voltage converter(500) converts a sensing current corresponding to data stored in the unit cell into a sensing voltage. The current-voltage converter receives the fed back sensing voltage and controls a level of the current inputted to an input terminal of the sensing current by corresponding to the level of the fed back sensing voltage. A sense amplifier(600) compares the sensing voltage with a preset reference voltage and amplifies the sensing voltage.