Method of manufacturing nitride semiconductor device,申请号GB20120000978-传众专利搜索

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发明名称	Method of manufacturing nitride semiconductor device
摘要
申请公布号	GB201200978(D0)	申请公布日期	2012.03.07
申请号	GB20120000978	申请日期	2012.01.20
申请人	MITSUBISHI ELECTRIC CORPORATION	发明人
分类号		主分类号
代理机构		代理人
主权项
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