| 摘要 |
PURPOSE:To manufacture an ink jet recording device, a recording electrode thereof can output signal voltage having large amplitude, by forming a film consisting of an amorphous silicon compound in thickness through which charges tunnel. CONSTITUTION:When the surface of an electrode is surface-treated by an a-SiN, a-SiC, a-SiN:H or a-SiC:H film 32, the thickness of the film 32 is set at a small value so that charges tunnel to the film 32 or at a large value so that electrodes 2a...5 are etched electrolytically by the electrolysis of ink. Film thickness to 100Angstrom from 5Angstrom of the film 32 sufficiently fulfills the function of the film 32. The electrical and optical characteristics of the film 32 change according to the conditions of film formation on film formation. On a method such as a sputtering method, the area ratio of single crystal Si to a target composed of carbide is altered and the ratio of components of Si to C in the film can be varied in the a-SiC film, and the ratio of components of Si to N in the film can be changed by the partial pressure ratio of an Ar gas to a gas containing N in the a-SiN film. |
