| 摘要 |
PURPOSE: A semiconductor crystal growing apparatus and a method thereof are provided to increase or decrease crystal growth speed by controlling the contact area of a metal material and a halogenation reaction gas. CONSTITUTION: A metal source supply part(200) is arranged within a reaction tube. The metal source supply part is comprised of a plurality of wells(220) arranged on a boat(210) and a cover part(230). The well is separated into three partitions(220a,220b,220c). The cover part is comprised of an upper surface plate(232) in which an opening part(231) is arranged. A halogenation reaction gas supply pipe(331) is fixed to the opening part of the upper surface plate.
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