MANUFACTURE OF CADMIUM MERCURY TELLURIDE

摘要

A layer (37) of Cd Hg1-xTe is grown on a substrate (20) by growing layers of HgTe (35)x t1 thick and CdTe (36) t2 thick alternately. The thicknesses t1 and t2 combined are less than 0.5 .mu.m so that interdiffusion occurs during growth to give a single layer (37) of Cd Hg1-xTe. The HgTe layers (35) are grown by flowing a Te alkyl (7) into a vessel (16) containing the substrate (20) and filled with an Hg atmosphere by a Hg bath (19). The CdTe layers (36) are grown by flowing a Cd alkyl (6) into the vessel (16) where it combines preferentially with the Te on the substrate (20). Varying the ratio of t to t varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced (25) to dope the growing layer.