| 发明名称 |
AlGaInN-based lasers produced using etched facet technology |
| 摘要 |
A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE. |
| 申请公布号 |
US8130806(B2) |
申请公布日期 |
2012.03.06 |
| 申请号 |
US20060455636 |
申请日期 |
2006.06.20 |
| 申请人 |
BEHFAR ALEX A.;SCHREMER ALFRED T.;STAGARESCU CRISTIAN B.;VAINATEYA;BINOPTICS CORPORATION |
发明人 |
BEHFAR ALEX A.;SCHREMER ALFRED T.;STAGARESCU CRISTIAN B.;VAINATEYA |
| 分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
| 代理机构 |
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代理人 |
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