发明名称 |
Schottky diode with silicide anode and anode-encircling P-type doped region |
摘要 |
An integrated circuit includes a Schottky diode having a cathode defined by an n-type semiconductor region, an anode defined by a cobalt silicide region, and a p-type region laterally annularly encircling the cobalt silicide region. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation. An n+-type contact region is laterally separated by the p-type region from the first silicide region and a second cobalt silicide region is formed in the n-type contact region. The silicided regions are defined by openings in a silicon blocking dielectric layer. Dielectric material is left over the p-type region. The p-type region may be formed simultaneously with source/drain regions of a PMOS transistor. |
申请公布号 |
US8129814(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US201113085102 |
申请日期 |
2011.04.12 |
申请人 |
PENDHARKAR SAMEER PRAKASH;MINDRICELU EUGEN POMPILIU;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PENDHARKAR SAMEER PRAKASH;MINDRICELU EUGEN POMPILIU |
分类号 |
H01L27/095;H01L29/792 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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