| 摘要 |
There is provided a high-integrated complementary metal-oxide semiconductor static random-access memory including an inverter. The inverter includes: a first pillar that is formed by integrating a first-conductivity-type semiconductor, a second-conductivity-type semiconductor, and an insulating material disposed between the first-conductivity-type semiconductor and the second-conductivity-type semiconductor, and that vertically extends with respect to a substrate; a first second-conductivity-type high-concentration semiconductor disposed on the first-conductivity-type semiconductor; a second second-conductivity-type high-concentration semiconductor disposed under the first-conductivity-type semiconductor; a first first-conductivity-type high-concentration semiconductor disposed on the second-conductivity-type semiconductor; a second first-conductivity-type high-concentration semiconductor disposed under the second-conductivity-type semiconductor; a gate insulating material formed around the first pillar; and a gate conductive material formed around the gate insulating material. |
