发明名称 |
Display device and method for manufacturing the same |
摘要 |
According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
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申请公布号 |
US8129900(B2) |
申请公布日期 |
2012.03.06 |
申请号 |
US20080239248 |
申请日期 |
2008.09.26 |
申请人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU;SAKAMOTO NAOYA;AKIMOTO KENGO;SATO KEIJI;MARUYAMA TETSUNORI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU;SAKAMOTO NAOYA;AKIMOTO KENGO;SATO KEIJI;MARUYAMA TETSUNORI |
分类号 |
H01J1/62;G09F9/30;H01J17/49;H01J63/04;H01L27/32;H01L51/50;H01L51/52;H05B33/10;H05B33/26;H05B33/28 |
主分类号 |
H01J1/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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