发明名称 LIGHT EMITTING DIODE CHIP INCLUDING CURRENT BLOCKING LAYER AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: A light emitting diode chip including a current blocking layer and method of manufacturing the same is provided to prevent the concentration of a light on a certain region by suppressing light from an active layer to the lower part of an electrode. CONSTITUTION: A first gallium nitride-based compound layer(220) is electrically connected to a first electrode(270). An active layer(230) is formed on the first gallium nitride-based compound layer. A second gallium nitride-based compound layer(240) is formed on the active layer. A second electrode(260) is formed on the second gallium nitride-based compound layer. A second electrode comprises a transparent electrode(250) and a pad electrode(260).
申请公布号 KR20120018535(A) 申请公布日期 2012.03.05
申请号 KR20100081446 申请日期 2010.08.23
申请人 ILJIN MATERIALS CO., LTD. 发明人 SHIN, JOO SUN;YUN, BOK HYUN;PARK, HAE SUNG;KIM, YOUN KEUN
分类号 H01L33/14;H01L33/20 主分类号 H01L33/14
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