LIGHT EMITTING DIODE CHIP INCLUDING CURRENT BLOCKING LAYER AND METHOD OF MANUFACTURING THE SAME
摘要
PURPOSE: A light emitting diode chip including a current blocking layer and method of manufacturing the same is provided to prevent the concentration of a light on a certain region by suppressing light from an active layer to the lower part of an electrode. CONSTITUTION: A first gallium nitride-based compound layer(220) is electrically connected to a first electrode(270). An active layer(230) is formed on the first gallium nitride-based compound layer. A second gallium nitride-based compound layer(240) is formed on the active layer. A second electrode(260) is formed on the second gallium nitride-based compound layer. A second electrode comprises a transparent electrode(250) and a pad electrode(260).
申请公布号
KR20120018535(A)
申请公布日期
2012.03.05
申请号
KR20100081446
申请日期
2010.08.23
申请人
ILJIN MATERIALS CO., LTD.
发明人
SHIN, JOO SUN;YUN, BOK HYUN;PARK, HAE SUNG;KIM, YOUN KEUN