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发明名称
In-Ga-Zn TYPE OXIDE SPUTTERING TARGET
摘要
<p>하기에 나타내는 산화물 A와, 빅스바이트형의 결정 구조를 갖는 산화인듐(InO)을 함유하는 스퍼터링 타겟: 산화물 A: 인듐 원소(In), 갈륨 원소(Ga) 및 아연 원소(Zn)를 포함하고, X선 회절 측정(Cukα선)에 의해 입사각(2θ)이 7.0°~8.4°, 30.6°~32.0°, 33.8°~35.8°, 53.5°~56.5° 및 56.5°~59.5°인 각 위치에서 회절 피크가 관측되는 산화물.</p>
申请公布号
KR101107957(B1)
申请公布日期
2012.03.02
申请号
KR20117015302
申请日期
2010.11.18
申请人
发明人
分类号
C04B35/00;C23C14/34;H01B5/14
主分类号
C04B35/00
代理机构
代理人
主权项
地址
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