摘要 |
A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer. |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;PARK, JIN-HONG;ASSEFA, SOLOMON;KIM, JEE, HWAN;VLASOV, YURII |
发明人 |
PARK, JIN-HONG;ASSEFA, SOLOMON;KIM, JEE, HWAN;VLASOV, YURII |