| 摘要 |
The present disclosure provides an ESD protection device. The ESD protection device includes a p-type well region and an n-type well region disposed to contact each other at one side thereof, an n-type drain region disposed on a contact surface between the p-type well region and the n-type well region, an n-type source region formed in the p-type well region and separated from the n-type drain region by a channel region, a gate electrode layer disposed above the channel region with a gate insulation layer interposed between the gate electrode layer and the channel to region, a p-type anode region disposed inside the n-type well region, a plurality of conductive layers for coupling resistance separated from each other over the p-type well region, a capacitor including an impurity region disposed inside the n-type well region and a capacitor electrode layer disposed above the n-type well region with an insulation layer interposed between the capacitor electrode layer and the n-type well region, a first wire connecting the n-type source region and one of the conductive layers to a cathode, the one of the conductive layers being disposed at one side of the device among the plurality of conductive layers for coupling resistance, a second wire connecting another conductive layer disposed at the other side of the device among the plurality of conductive layers for coupling resistance, the gate electrode layer, and the capacitor electrode layer to each other, and a third wire connecting the p-type anode region to an anode. |
